Micro-cantilever testing of diamond - silicon carbide interfaces in silicon carbide bonded diamond materials produced by reactive silicon infiltration
نویسندگان
چکیده
SiC-bonded diamond materials produced by pressureless reactive infiltration of preforms with silicon show high hardness and wear resistance. These properties are due to the relatively volume content approximately 50 vol% mechanically strong interface between SiC. To determine bending strength individual interfaces SiC, micro-cantilevers were prepared focused ion beam milling at 13 grain boundaries in-situ tests carried out in a scanning electron microscope. The determined cantilevers showing fracture was 10.4 ± 4.0 GPa. Fracture surfaces analyzed verify behavior initiation. In addition diamond/SiC, occurred inside SiC grains SiC/silicon comparable values. results prove diamond/SiC-interface bonding strength. • A detailed experimental analysis diamond/SiC out. High experimentally determined. particles is major reason for resistance composites.
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ژورنال
عنوان ژورنال: Open ceramics
سال: 2021
ISSN: ['2666-5395']
DOI: https://doi.org/10.1016/j.oceram.2021.100176